PART |
Description |
Maker |
RD30HUF1 |
Silicon MOSFET Power Transistor/520MHz/30W Silicon MOSFET Power Transistor,520MHz,30W
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MAPLST1900-030CF |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V
|
Tyco Electronics
|
D45C11 D45C2 D45C8 D44C5 D44C8 D45C5 D44C11 D44C1 |
POWER TRANSISTORS(4A,30-80V,30W) 功率晶体管(4A30 - 80V的,功率30W OSC 5V 8PIN CMOS PROGRAM POWER TRANSISTORS(4A/30-80V/30W) TRANSISTOR|BJT|PNP|80VV(BR)CEO|4AI(C)|TO-220AB
POWER TRANSISTORS(4A30-80V30W)
|
Mospec Semiconductor, Corp. MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
STK433-030-E |
2-channel class AB audio power IC, 30W 30W
|
Sanyo Semicon Device
|
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
T1G6003028-FS T1G6003028-FSEVB1 T1G6003028-FS-15 |
30W, 28V, DC ?6 GHz, GaN RF Power Transistor 30W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
PH3135-30M |
Radar Pulsed Power Transistor 30W, 3.1-3.5 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
MAPRST1214-30UF |
Radar Pulsed Power Transistor 30W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty
|
M/A-COM Technology Solutions, Inc.
|
MAPLST1617-030CF |
RF Power Field Effect Transistor LDMOS, 1600 - 1700 MHz, 30W, 28V
|
Tyco Electronics
|
MAPLST0810-030CF MAPLST0810-030CF-05-2004 |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
|
MACOM[Tyco Electronics]
|
2SA1666YI-UL 2SA1666YI-TR 2SC4903YL-UL 2SA1666YI-0 |
200 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR 100 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 30 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET 0.2 A, 50 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 20 V, 9 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 50 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET 0.2 A, 20 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET UHF BAND, Si, RF SMALL SIGNAL, FET 3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1 A, 60 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR 50 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET 100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.3 A, 100 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 2 A, 20 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET 2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET 5 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc. LEDtronics, Inc. Integrated Device Technology, Inc. Vishay Beyschlag Air Cost Control Mini-Circuits Moeller Electric, Corp. OSRAM GmbH Cooper Hand Tools KOA Speer Electronics,Inc. ProMOS Technologies, Inc.
|
IPB100N08S2L-07 IPP100N08S2L-07 SP0002-19052 SP000 |
100 A, 75 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB OptiMOS? Power-Transistor OptiMOS㈢ Power-Transistor OptiMOSPower-Transistor
|
Infineon Technologies AG
|
|